NCE6990D mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche v.
General Features
* VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
* High density .
The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic di.
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